Experimental demonstration of a vertical LOCOS Insulated Base Transistor

摘要

In this paper we demonstrate, for the first time, electrical results of vertical LOCOS based Insulated Base Transistors (IBT) fabricated in a 85 V BiCMOS process. Experimental results show that the devices exhibit dasiatransistor likepsila characteristics and show enhancements with respect to saturation current level when compared to MOSFET equivalents. Furthermore, a cathode cell structure with a MOSFET in parallel to the IBT displays superior performance when compared to devices where this is eliminated.