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HOW TO DRIVE MOSFETs AND IGBTs INTO THE 21ST CENTURY

机译:如何驱动MOSFET和IGBT进入21世纪

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摘要

As the industry pushes for higher power levels and higher switching frequencies, power supplies, which use MOSFETs/IGBTs for power conversion, are being designed to their ultimate attainable efficiency, smallest footprint, size and weight. The subject of driving MOSFETs/IGBTs to their highest possible frequencies at the highest possible power levels, still providing protection, is multi-dimensional and requires knowledge of MOSFETs and IGBTs as well as circuit theory and how it applies to this discipline. Many topologies in high voltage converter, inverter and matrix converter applications require special techniques to drive MOSFETs and IGBTs. The paper deals with this subject and explains with examples how to face the challenges of tomorrow today.
机译:随着行业不断寻求更高的功率水平和更高的开关频率,使用MOSFET / IGBT进行功率转换的电源正在设计,以达到其最终可获得的效率,最小的占位面积,尺寸和重量。以最高可能的功率水平将MOSFET / IGBT驱动到尽可能高的频率,同时仍提供保护的主题是多维的,需要MOSFET和IGBT的知识以及电路理论以及如何将其应用于该学科。高压转换器,逆变器和矩阵转换器应用中的许多拓扑都需要特殊的技术来驱动MOSFET和IGBT。本文讨论了这个主题,并举例说明了如何应对今天的明天的挑战。

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