Recent Achievements and Future Development Trends of High Voltage Si-based Devices

机译：高压硅基器件的最新成就和未来发展趋势

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This paper gives an overview of the latest achievements in the area of Si-based turn-off devices for high voltage applications in the power range beyond 10MW. Today, two device technologies are available in this power range depending on the application demands: The Integrated Gate Commutated Thyristor (IGCT) and the Insulated Gate Bipolar Transistor (IGBT). In this paper, we will show the latest development trends of these two devices, including some relevant packaging results.

机译：本文概述了功率超过10MW的用于高压应用的硅基关断器件领域的最新成就。如今，根据应用需求，可在此功率范围内提供两种器件技术：集成栅换向晶闸管（IGCT）和绝缘栅双极晶体管（IGBT）。在本文中，我们将展示这两种器件的最新发展趋势，包括一些相关的封装结果。

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《Power Electronic Components and their Applications 2017; 7. ETG-Symposium》|2017年|1-10|共10页
会议地点 Bad Nauheim(DE)
作者
Arnost Kopta;
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正文语种 eng
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Recent Achievements and Future Development Trends of High Voltage Si-based Devices

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