200 degree High Temperature Operation of 250V 0.5A One Chip Inverter ICs in SOI

摘要

Possibility of 200 degree operation of one chip inverter ICs for DC brushless motor control has experimentally been confirmed. We fabriacted three phase inverter circuits, including six 250V 0.5A lateral IGBTs, diodes and control circuits, in 5mivm thick SOI layer on 2mivm thick buried oxide. The fabricated ICs successfully operated at 20kHz PWM carrier frequency at 200 degree heat sink temperature.