The thermodynamic spin magnetization of strongly correlated 2d electrons in a silicon inversion layer

摘要

A novel method invented to measure the minute thermodynamic spin magnetization of dilute two-dimensional fermions is applied to electrons in a silicon inversion layer. Interplay between the ferromagnetic interaction and disorder enhances the low temperature susceptibility by a factor of up to 7.5 compared with the Pauli susceptibility of non-interacting electrons. The magnetization peaks in the vicinity of the density where transition to strong localization takes place. At the same density, the susceptibility becomes extremely close to that of free spins (Curie susceptibility), indicating an almost perfect compensation of the kinetic energy toll associated with spin polarization by the energy gained from the ferromagnetic correlation. Nonetheless, the balance favors a paramagnetic phase over spontaneous magnetization.