Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field

摘要

We present magnetoresistance measurements on metallic n-type InP sample with a carrier density n = 1.2410~(23) m~(-3) , far from the metal-insulator transition (MIT). The experiments were carried out at low temperature in the range 4.2-0.6 K and in magnetic fields up to 1 T. We have observed negative magnetoresistance (NMR) behaviour, and the experimental data are interpreted in terms of the weak localization and the effect of electron-electron interactions. Experimental data are compared with available theoreticalrnmodels using a non-linear regression method with adjustable parameters τ_ε and F. τ_ε is the inelastic scattering time and F is the Hartree-Fock constant.