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Unijunction transistor circuit for detecting weak magnetic field - comprises transistor without metallic case and, insulated from ambient light and operating as negative resistance oscillator

机译:用于检测弱磁场的单结晶体管电路-包括不带金属外壳的晶体管,与环境光绝缘并用作负电阻振荡器

摘要

A unijunction transistor (1) of the double base diode type is formed without the metallic cover and has been mounted on a plexiglass support. This transistor acts as the magnetic field sensor when the field is applied transversely w.r.t. the semiconductor bar. A capacitor (2) is mounted in parallel between the emitter (E) and the first base (B1). A resistor (3) is connected to the end of the capacitor (A) connected to the emitter while its other end is connected to a polarising power supply (5) for the emitter and base circuit. A second polarising supply (6) is connected to the two base circuits to control the emitter current and frequency of oscillation characteristic. It also permits accentuation of the negative resistance characteristic to adjust its sensitivity.
机译:在没有金属盖的情况下形成了双基极二极管类型的单结晶体管(1),并且已经将其安装在有机玻璃支架上。当横向施加电场时,该晶体管充当磁场传感器。半导体棒。电容器(2)并联安装在发射极(E)和第一基极(B1)之间。电阻器(3)连接到电容器(A)的与发射极相连的一端,而电阻器的另一端则连接到用于发射极和基极电路的极化电源(5)。第二个极化电源(6)连接到两个基本电路,以控制发射极电流和振荡频率。它还可以强调负电阻特性以调整其灵敏度。

著录项

  • 公开/公告号FR2512964B1

    专利类型

  • 公开/公告日1983-12-23

    原文格式PDF

  • 申请/专利权人 CENTRE NAL RECHERC SCIENTIFIQUE;

    申请/专利号FR19810017348

  • 发明设计人

    申请日1981-09-14

  • 分类号G01R33/02;G01V3/08;

  • 国家 FR

  • 入库时间 2022-08-22 08:45:38

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