Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductorat very low temperatures with magnetic field

摘要

ABSTRACTWe present magnetoresistance measurements on metallic n-type InP sample with a carrier density n= 1.2410~(23)m~(-3),far from the metal-insulator transition (MIT). The experiments were carried out at low temperature in the range 4.2-0.6 K and in magnetic fields up to 1 T. We have observed negativemagnetoresistance (NMR) behaviour, and the experimental data are interpreted in terms of the weak localizationand the effect of electron-electron interactions. Experimental data are compared with available theoretical models using a non-linear regression method with adjustable parameters τ. and F. τ_ε is the inelastic scatteringtime and F is the Hartree-Fock constant.