Next-Generation Thin Films for Photovoltaics: InGaAsN

摘要

A new semiconductor alloy system. InGaAsN, has been identified as a candidate material for multi-junction solar cells having efficiencies greater than 40percent. The introduction of small amounts of nitrogen (approx2percent) into the InGaAs alloy system greatly reduces the band gap energy, with reductions approaching 0.4 eV for 2percent nitrogen content! With the appropriate ratio of indium to nitrogen concentrations, InGaAsN can be lattice matched to GaAs.