首页> 外文会议>Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE >Effect of surface cleaning on pyramid size of randomly textured mono crystalline silicon and the impact on solar cell efficiency
【24h】

Effect of surface cleaning on pyramid size of randomly textured mono crystalline silicon and the impact on solar cell efficiency

机译:表面清洁对随机织构单晶硅金字塔尺寸的影响及其对太阳能电池效率的影响

获取原文

摘要

In this paper we report on the use of cleaning chemistry, SunSource™68 developed by Air Product Chemicals, Inc., (APCI) to control random texturing time and pyramid size on mono-crystalline silicon wafers. This chemistry is applied immediately after saw damage removal, which removes residues and acts as a catalyst to initiate texturing very rapidly. Due to rapid nucleation, the amount of IPA needed in the solution is very small and our texturing time is cut down by half. Thus the amount of silicon removed as a result of texturing is ~45% less than the standard texturing without the clean and this increases the texturing bath life. We have applied this cleaning chemistry before texturing and compared with the standard texturing process. The use of the cleaning solution has produced uniform pyramids across a wafer and from wafer to wafer, irrespective of wafer vendor. We found, repeatedly and reproducibly, ~0.5% efficiency improvement with the cells made in conjunction with the cleaning chemistry. This improvement resulted from a combination of lower weighted reflectance and narrow gridlines resulting from uniform and small pyramids associated with the cells using cleaning chemistry. We have demonstrated an 18.3% average efficiency large area (239 cm2) cells on 2.6 Ω-cm CZ Si compared to 17.8% for the standard textured cells.
机译:在本文中,我们报告了由Air Product Chemicals,Inc.(APCI)开发的清洁化学品SunSource™68的使用,以控制单晶硅晶片上的随机纹理化时间和金字塔尺寸。去除锯片损伤后立即应用该化学方法,该方法可清除残留物并充当催化剂以非常快速地启动纹理化。由于快速成核,解决方案中所需的IPA量非常小,并且我们的加绒时间减少了一半。因此,由于织构化而去除的硅量比没有清洁的标准织构少约45%,这延长了织构化浴的寿命。我们在纹理化之前已经应用了这种清洁化学方法,并与标准纹理化过程进行了比较。清洁溶液的使用已在整个晶圆上以及从一个晶圆到另一个晶圆产生了均匀的棱锥,而与晶圆供应商无关。我们反复,可重复地发现,结合清洁化学方法制成的电池,效率提高了约0.5%。这种改善是由于加权化学反射率较低和较窄的网格线的结合所致,这些网格线是使用清洁化学方法与电池相关联的均匀而小的金字塔形所产生的。我们已经证明,在2.6Ω-cm的CZ Si上,大面积(239 cm2)大面积电池的平均效率为18.3%,而标准纹理电池为17.8%。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号