Abstract: 3D photonic lattices are engineered 'materials' which are the photonic analogues of semiconductors. These structures were first proposed and demonstrated in the mid-to-late 1980's. However, due to fabrication difficulties, lattices active in the IR are only just emerging. A variety of structures and fabrication approaches have been investigated. The most promising approach for many potential applications is a diamond-like structure fabricated using silicon microprocessing techniques. This approach has enabled the fabrication of 3D silicon photonic lattices active in the IR. The structures display bandgaps centered from 12$mu down to 1.55$mu@, depending on pitch. !23
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