3D photonic lattices are engineered 'materials' which are the photonic analogues of semiconductors. These structures were first proposed and demonstrated in the mid-to-late 1980's. However, due to fabrication difficulties, lattices active in the IR are only just emerging. A variety of structures and fabrication approaches have been investigated. The most promising approach for many potential applications is a diamond-like structure fabricated using silicon microprocessing techniques. This approach has enabled the fabrication of 3D silicon photonic lattices active in the IR. The structures display bandgaps centered from 12$mu down to 1.55$mu@, depending on pitch.
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机译：3D光子格子是设计的“材料”，是半导体的光子类似物。这些结构首先在20世纪80年代晚期中提出并展示。然而，由于制造困难，IR中的晶格仅仅是新兴的。已经研究了各种结构和制造方法。许多潜在应用的最有希望的方法是使用硅片微处理技术制造的菱形结构。这种方法使得在IR中的3D硅光子晶格的制造能够制造。该结构显示带隙以12 $ mu为中心，根据间距，从12 $ 1.55 $ mu @。
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