Selective MOVPE of III-nitrides and device fabrication on an Si substrate

摘要

Growth of Ill-nitrides on silicon is investigated to realize optical devices on silicon substrate. The emphasis is focused on the growth of highly qualified GaN micro-crystals on patterned Si substrate so that we may achieve GaN-Si integration. Because of the differences in the crystal structure and the thermal expansion coefficient, the epitaxial layer is subject to defects/cracks, which are overcome by selective area growth (SAG) on patterned Si substrate. By using the anisotropy etching of the Si, we can make {111} facet of Si on the substrate surface. The SAG of the GaN is achieved on the thus prepared {111} facet. As a result, growth of non-polar or semi-polar GaN has been achieved in self-organizing manner. The growth of (1-101), (11-22) and (11-20)GaN are demonstrated on (001), (113) and (110) Si substrate, respectively. Fabrication of an optical waveguide and light emitting diode are demonstrated on Si substrate.