Silicon SPAD with near-infrared enhanced spectral response

摘要

We introduce a novel SPAD device with high photon detection efficiency and good performances in terms of temporal resolution and dark count rate. The designed detectors are able to attain a PDE as high as 40% at a wavelength of 800 nm while keeping photon detection jitter below 100 ps. The device was fabricated with a suitable planar silicon technology process that allows the development of detector arrays.