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Full range IGBT and MOSFET modules based on latest chips technology

机译:基于最新芯片技术的全系列IGBT和MOSFET模块

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StarPower developed a product line of IGBT and MOSFET modules for industrial applicationsrnin 2005, and since then has responded to market needs by releasing successive series of newrnmodules realizing low loss and high power density.rnThe latest SPT+ chip technology from ABB has been successfully adopted in standard 34mm、rn48mm、62mm series, 17mm height compact 45mmx107mm (C5), 62mm×122mm (C6) andrn150mm×162mm (C7) medium power series and 140mmx130mm packages high power seriesrnoptimized for motor drive applications. These modules offer very low power loss、soft switchingrnwaveform、low thermal resistance、ruggedness and reliability.rnThe Trench + Field Stop chip technology from IR has also been adopted in StarPower’srncompact packages L1 (PIM)、L2 (PIM) and A1 (IPM),optimized for small motor drives andrnwhite goods applications.rnThe advanced planar and trench MOSFET chips from IR have been adopted in series of lowrnprofile packages with low stray inductance designed with a height of 16mm and optimized forrnhigh switching frequency applications.rnThis paper discusses the performance、reliability and product lineup of StarPower’s IGBT andrnMOSFET modules.
机译:StarPower于2005年开发了用于工业应用的IGBT和MOSFET模块产品线,此后通过发布一系列实现低损耗和高功率密度的新型模块来满足市场需求。rn ABB的最新SPT +芯片技术已成功采用标准34mm,rn48mm,62mm系列,17mm紧凑型45mmx107mm(C5),62mm×122mm(C6)和rn150mm×162mm(C7)中功率系列和140mmx130mm封装的高功率系列,针对电机驱动应用进行了优化。这些模块具有极低的功率损耗,软开关,波形,低热阻,坚固性和可靠性。ir的Trench + Field Stop芯片技术也已被采用在StarPower的紧凑型封装L1(PIM),L2(PIM)和A1(IPM)中),针对小型电机驱动器和白色家电应用进行了优化。红外的先进平面和沟槽MOSFET芯片已被用于一系列低轮廓封装,具有低杂散电感,高度为16mm,并针对高开关频率应用进行了优化。 ,StarPower IGBT和rnMOSFET模块的可靠性,产品阵容。

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