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Design-based Thermal Performance Evaluation of a GaAs MMIC Device in a Plastic Ball grid Array Package

机译:塑料球栅阵列封装中GaAs MMIC器件的基于设计的热性能评估

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Computational Fluid Dynamics (CFD) simulations were conducted to characterize the thermal performance of a gallium arsenide (GaAs) monolitic microwave integrated circuit (MMIC) device in a wire-bonded plastic ball grid array (WB-PBGA) package. Thermal analysis is required to assess the design risks associated with the low thermal conductivity of GaAs compared to silicon and the constraints on package substrate design and boundary conditions in cellular basestation cooling applications. A comprehensive thermal model of the sub-system was developed and implemented for an ambient temperature of 85 deg C. Due to the lower thermal conductivity of GaAs, power dissipation in the 13individual (discrete) areas on the die were modeled instead of uniform surface heat flux or volumetric heat generation rate approximations. A conjugate heat transfer problem, in which radiative loss from the exposed surfaces of the package to the RF enclosure were accounted for, was solved for vertical natural convection cooling of the sub-system. The model was benchmarked with infrared thermography measurements from an unencapsulated package in still air environment. Based on this benchmarking, the accuracy of predicted maximum temperatures from the model was determined to be in the range of +6 to +16
机译:进行了计算流体动力学(CFD)仿真,以表征引线键合塑料球栅阵列(WB-PBGA)封装中的砷化镓(GaAs)单片微波集成电路(MMIC)器件的热性能。需要进行热分析,以评估与硅相比GaAs导热系数低相关的设计风险,以及蜂窝基站冷却应用中封装基板设计和边界条件的限制。针对环境温度为85摄氏度,开发并实施了该子系统的综合热模型。由于GaAs的导热系数较低,因此对芯片上13个单个(离散)区域的功耗进行了建模,而不是均匀地加热了表面通量或体积生热率的近似值。对于子系统的垂直自然对流冷却,解决了共轭传热问题,其中考虑了从封装暴露表面到RF外壳的辐射损失。该模型通过在静止空气环境中未封装包装的红外热像仪测量结果进行基准测试。基于此基准,确定模型预测的最高温度的精度在+6到+16范围内

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