Orientation Distributions of Ferroelectric BLT Films for High-Density Semiconductor Memories

摘要

Issues of ferroelectric high-density memories (>64Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than 0.1um~2 and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by an electron backscatter diffraction (EBSD) technique. Ferroelectric domain characteristics by a piezoresponse force microscope (PFM) were also performed to study the dependence of reliabilities on the grain orientations and distributions.