METHOD OF FORMING FERROELECTRIC FILM, FERROELECTRIC MEMORY, PROCESS FOR PRODUCING FERROELECTRIC MEMORY, SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

In a method of forming a ferroelectric film according to the present invention, pulsed laser light or pulsed lamp light is applied to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the oxide film. A light transmission and/or absorption film is formed over the oxide film. Crystallization of the oxide is performed by applying pulsed laser light or pulsed lamp light from above the light transmission and/or absorption film to form a ferroelectric film.