ISOM - The Institute of Optoelectronics Systems and Microtechnology, ETSI de Telecomunicacion, Universidad Complutense de Madrid, Avenida Complutense 30, Ciudad Universitaria, 28040 Madrid, Spain;
ISOM - The Institute of Optoelectronics Systems and Microtechnology, ETSI de Telecomunicacion, Universidad Complutense de Madrid, Avenida Complutense 30, Ciudad Universitaria, 28040 Madrid, Spain;
C2N at the University Paris-Sud, University Paris-Saclay, rue Ampere, Orsay, France;
Universite Cote d'Azur, CNRS, CRHEA, Valbonne, France;
Universite Cote d'Azur, CNRS, CRHEA, Valbonne, France;
Institute for Quantum Electronics, ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
Institute for Quantum Electronics, ETH Zurich, Wolfgang-Pauli-Strasse 16, 8093 Zurich, Switzerland;
Universite Cote d'Azur, CNRS, CRHEA, Valbonne, France;
Universite Cote d'Azur, CNRS, CRHEA, Valbonne, France;
ISOM - The Institute of Optoelectronics Systems and Microtechnology, ETSI de Telecomunicacion, Universidad Complutense de Madrid, Avenida Complutense 30, Ciudad Universitaria, 28040 Madrid, Spain;
ZnO; ZnMgO; intersubband; terahertz; infrared; homoepitaxy; non-polar; quantum well;
机译:ZnO / ZnMgO多量子阱中的中红外子带间吸收
机译:基于m平面ZnO / ZnMgO量子阱的短红外波长量子级联检测器
机译:对极性ZnO / ZnMGO多量子阱中的三通带转换的许多身体影响
机译:M平面ZnO / Znmgo MQWS中的运动器吸收
机译:由于氮化镓/氮化铝超晶格中的子带间跃迁而引起的近红外波长吸收。
机译:CdSe胶体量子阱中的偏振近红外子带间吸收
机译:基于M平面ZnO / ZnMGO量子孔的短红外波长量子级联探测器