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Method of preparation of zinc oxide zno p type or of type p znmgo.

机译:制备氧化锌zno p型或p znmgo型的方法。

摘要

Preparing p-type doped zinc oxide (ZnO) or p-type doped zinc magnesium oxide (ZnMgO), comprises depositing a silica, which is optionally doped by a dopant element from column V of periodic classification of elements, on a surface of a substrate made of n-type doped ZnO or n-type doped ZnMgO, annealing the substrate and the deposited silica to induce outdiffusion of zinc from the substrate towards the silica and the formation of zinc gaps in a part of the substrate adjacent to the silica, and doping the part of substrate adjacent to silica by the dopant element. Preparing p-type doped zinc oxide (ZnO) or p-type doped zinc magnesium oxide (ZnMgO), comprises depositing a silica, which is optionally doped by a dopant element from column V of periodic classification of elements, on a surface of a substrate made of n-type doped ZnO or n-type doped ZnMgO, annealing the substrate and the deposited silica at a sufficient temperature and a sufficient time to induce outdiffusion of zinc from the substrate towards the silica and the formation of zinc gaps in a part of the substrate adjacent to the silica, and doping the part of substrate adjacent to silica by the dopant element. Independent claims are included for: (1) the p-type doped ZnO or ZnMgO prepared by the method; (2) the substrate; and (3) the heterostructure with quantum wells.
机译:制备p型掺杂的氧化锌(ZnO)或p型掺杂的氧化锌镁(ZnMgO)包括在基材表面上沉积二氧化硅,该二氧化硅任选地被元素周期性分类的V列的掺杂剂元素掺杂。由n型掺杂的ZnO或n型掺杂的ZnMgO制成,对衬底和沉积的二氧化硅进行退火以诱导锌从衬底向二氧化硅的向外扩散,并在与二氧化硅相邻的部分衬底中形成锌间隙。用掺杂剂元素掺杂与二氧化硅相邻的衬底部分。制备p型掺杂的氧化锌(ZnO)或p型掺杂的氧化锌镁(ZnMgO)包括在基材表面上沉积二氧化硅,该二氧化硅任选地被元素周期性分类的V列的掺杂剂元素掺杂。由n型掺杂的ZnO或n型掺杂的ZnMgO制成,在足够的温度和足够的时间对衬底和沉积的二氧化硅进行退火,以诱导锌从衬底向二氧化硅的扩散,并在一部分硅中形成锌隙。衬底与二氧化硅相邻,并通过掺杂元素掺杂衬底与二氧化硅相邻的部分。包括以下独立权利要求:(1)通过该方法制备的p型掺杂的ZnO或ZnMgO; (2)基材; (3)具有量子阱的异质结构。

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