Key Laboratory of Information Photonics Optical Communication, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
rnKey Laboratory of Information Photonics Optical Communication, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
rnKey Laboratory of Information Photonics Optical Communication, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
rnKey Laboratory of Information Photonics Optical Communication, Ministry of Education, Beijing University of Posts and Telecommunications, Beijing 100876, China;
rnKey Laboratory of Information Photonics Optical Communication, Ministry of Education, Beijing University of Posts and Telecommunications, Beij;
GaAs nanowire; Au film; Growth rate; Surface density;
机译:比较GaAs(111)B和Si(111)上Au辅助GaAs纳米线的形核和生长
机译:Au辅助GaAs纳米线的初始生长过程中Ga在GaAs(111)B表面的优先吸附
机译:Au / GaAs(111)界面通过气液固机理在GaAs纳米线生长过程中纤锌矿结构形成中的作用
机译:生长具有不同厚度的金膜的砷化镓纳米线
机译:绿色化学和机械方面的固态合成银纳米线,影响纳米胎生长和等离子体研究的Au薄膜/ MOS2表面增强拉曼光谱法
机译:不同厚度的金膜催化GaAs纳米线的定量研究
机译:GaAs / Au共晶合金形成的初始阶段,用于GaAs纳米线的生长