Design of Complex Semiconductor Integrated Structures

摘要

We present the benefits and limitations for designing complex optical semiconductor-based integrated structures by means of advanced numerical modeling. Multi-section tunable laser designs are presented and their tuning properties are analyzed for different architectures. We introduce a model of an integrated SOA with electro-absorption modulator. Its spectral properties are analyzed function of the parameters of the absorber section, showing the influence on the extinction ration of the generated signal. An InP-type Mach-Zehnder modulator is designed, illustrating the models of Kerr, Frank-Keldysh and QCSE effects. An example of a photo-detector demonstrates how dimensions and absorption parameters can be optimized to increase its detection bandwidth.