7 MBE Growth of Mercury Cadmium Telluride

摘要

The molecular beam epitaxy (MBE) growth technique for mercury cadmium telluride (MCT), the in situ characterization techniques used, and the present status of achievable material quality are reviewed here. The issues remaining to be solved before MBE-grown MCT can reach its full potential for IR devices include substrate issues, p-doping, and reducing defect densities. Emphasis is placed on these issues, with the exception of substrate issues, which are discussed in Chapter 4.