Simple model of electromagnetic-wave-induced avalanching in semiconductors

摘要

Abstract: e transmission line model, which seeks to explain phenomena associated with avalanche/displacement current waves in semiconductors, is discussed. The model relies on breaking up the semiconductor drift space into small cells, each of which contains a transmission line element so as to allow an electromagnetic wave to propagate away from the generated plasma. The transmission line element also serves as the energy storage element. A time varying resistor controls the conductivity, induced by either a light signal or an avalanche. As expected, the model points out the importance of triggering an avalanche/displacement current wave in regions where the static field is high. Under certain conditions the model predicts a growing electromagnetic wave with sufficient amplitude to sustain avalanching. The model offers a possible explanation of the observed fast risetime pulses resulting from either optical or avalanche excitation of a small, spatially limited region of the semiconductor region.!2