High-speed GaAs metal-semiconductor-metal photodetectors with sub-0.1um finger width and finger spacing

摘要

Abstract: We have fabricated metal-semiconductor-metal photodetectors with sub-100 nm finger spacing and finger width on MBE-grown GaAs, which are, to our knowledge, the smallest ever reported. Dc measurement shows that they have low dark current and high sensitivity. Monte- Carlo simulations demonstrate that the response time of the photodetectors for a 30 nm finger spacing can be as short as 0.4 ps, and the cut-off frequency can be over 1 THz.!