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The Capability of a 1.3NA μstepper using 3D EMF Mask Simulations

机译:使用3D EMF掩模仿真的1.3NAμstepper的功能

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Lithographic methods of imaging in resist can be extended with the addition of immersion fluid. The higher index of refraction fluid can be used to print smaller features by increasing the numerical aperture beyond the limits of dry lithography. Alternately, an immersion optical system can achieve a larger depth of focus at the same numerical aperture as the equivalent dry lithography system. When numerical apertures are significantly greater than 1.0, polarization effects start to impact resolution seriously. Special illumination conditions will be used to extend resolution limits. Additional factors that affect imaging in resist need to be included if we are to achieve new resolution limits using high index of refraction materials to increase numerical apertures. In addition to material inhomogeneities, birefringence and optical surface effects, material absorption, coatings and index differences at boundaries will have a larger impact on image resolution as ray angles in the imaging system continue to increase with numerical aperture. Aerial and resist imaging effects that material characteristics have on polarization, uniformity and aberrations in the lens pupil will be studied.
机译:抗蚀剂成像的光刻方法可以通过添加浸液来扩展。通过增加数值孔径超过干法光刻的极限,可以使用较高折射率的流体印刷较小的特征。或者,浸没式光学系统可以在与等效干法光刻系统相同的数值孔径下获得更大的聚焦深度。当数值孔径明显大于1.0时,偏振效应开始严重影响分辨率。特殊的照明条件将用于扩展分辨率限制。如果要使用高折射率材料来增加数值孔径来达到新的分辨率极限,则需要包括影响抗蚀剂成像的其他因素。除材料不均匀性,双折射和光学表面效应外,边界处的材料吸收,涂层和折射率差异将对图像分辨率产生较大影响,因为成像系统中的射线角度会随着数值孔径的增加而不断增加。将研究材料特性对晶状体瞳孔的偏振,均匀性和像差的航拍和抗蚀剂成像效果。

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