Towards 100 nm Band NIR SLDs

摘要

The results of recent studies of superluminescent diodes (SLDs) based on new quantum-well (QW) (GaAl)As and (InGa)As heterostructures of spectral range 800 - 900 nm with spectral bandwidths of up to 80 nm and output power ex SM fiber of up to 50 mW are presented.