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Focused-lon-Beam-Dcposited Pt Contacts on ZnO Nanowires

机译：ZnO纳米线上的聚焦长束沉积Pt触点

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摘要

We report on the transport properties of single ZnO nanowires measured as a function of the length/square of radius ratio via transmission line method. The specific contact resistance of the FIB Pt contacts to the ZnO nanowires is determined as low as 1.1×10-5 Ωcm~2. The resistivity of the ZnO nanowires is measured to be 2.2 ×10~(-2) Ωcm. ZnO nanowire-based UV photodctectors contacted by the FIB-Pt with the photoconductive gain as high as ～10~8 have been fabricated and characterized.
机译：我们报告了通过传输线方法测得的单个ZnO纳米线的传输特性与半径/长度比的平方的关系。 FIB Pt接触ZnO纳米线的比电阻被确定为低至1.1×10-5Ωcm〜2。测得的ZnO纳米线的电阻率为2.2×10〜（-2）Ωcm。制备并表征了FIB-Pt接触的ZnO纳米线基紫外光电探测器，其光电导增益高达〜10〜8。

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  • 来源
  • 会议地点 Honolulu HI(US);Honolulu HI(US)
  • 作者

    J. H. He; P. H. Chang; C. Y. Chen; K. T. Tsai;

  • 作者单位

    Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, 106 Taiwan;

    Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, 106 Taiwan;

    Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, 106 Taiwan;

    Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei, 106 Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 微电子学、集成电路（IC）;
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