Nano-Scale Effects in GaN-based Light-Emitting Diodes

机译：GaN基发光二极管中的纳米尺度效应

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We here investigate the effects of built-in polarization on the properties of non-symmetric InGaN quantum wells. The impact of these nano-scale effects on the performance of blue light emitting diodes is analyzed utilizing advanced numerical simulation.

机译：我们在这里研究内置极化对非对称InGaN量子阱性能的影响。利用先进的数值模拟分析了这些纳米尺度效应对蓝色发光二极管性能的影响。

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来源
《NSTI(Nano Science and Technology Institute) Nanotechnology Conference and Trade Show(Nanotech 2004)》|2004年|P.15-17|共3页
会议地点 Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US);Boston MA(US)
作者
Joachim Piprek; Shuji Nakamura;
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作者单位

College of Engineering, University of California, Santa Barbara, CA 93106-9560, USA;

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会议组织
原文格式 PDF
正文语种 eng
中图分类半导体技术;
关键词
wurtzite semiconductors; GaN; light-emitting diodes; built-in polarization; InGaN quantum well; nano-photonics;

机译：纤锌矿半导体; GaN;发光二极管;内置极化; InGaN量子阱;纳米光子学;

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专利

1. Enhancement of light output power of GaN-based light-emitting diodes using a SiO_2 nano-scale structure on a p-GaN surface [J] . H W Huang, F I Lai, J K Huang, Semiconductor science and technology . 2010,第6期

机译：在p-GaN表面上使用SiO_2纳米尺度结构增强GaN基发光二极管的光输出功率
2. Sapphire Substrate Processing for High-Performance GaN-Based Light-Emitting Diodes: Micropatterning of Sapphire Substrates and Its Effect on Light Enhancement in GaN-Based Light-Emitting Diodes [J] . Natsuko Aota, Hideo Aida, Yutaka Kimura, Sensors and materials . 2014,第6期

机译：高性能基于GaN的发光二极管的蓝宝石衬底处理：蓝宝石衬底的微图案化及其对基于GaN的发光二极管中光增强的影响
3. Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase [J] . Zheng Dong-Guang, Shim Jong-In, Shin Dong-Soo Japanese journal of applied physics . 2021,第3期

机译：反向偏压应力下GaN基发光二极管降解机制的分析：缺陷和结温增加的影响
4. Nano-Scale Effects in GaN-based Light-Emitting Diodes [C] . Joachim Piprek, Shuji Nakamura NSTI nanotechnology conference and trade show . 2004

机译：GaN基发光二极管中的纳米级效应
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes [O] . Hongpo Hu, Shengjun Zhou, Xingtong Liu, -1

机译：GaN / AlGaN /溅射AlN成核层对GaN基紫外发光二极管性能的影响
7. Structural Effects on Highly Directional Far-Field Emission Patterns of GaN-Based Micro-Cavity Light-Emitting Diodes With Photonic Crystals [O] . Chun-feng Lai, Student Member, Hao-chung Kuo, 2016

机译：具有光子晶体的GaN基微腔发光二极管的高方向远场发射模式的结构效应

Nano-Scale Effects in GaN-based Light-Emitting Diodes

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