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Gated Carbon Nanotube Field Emission Enhancement and Regeneration by Hydrogen

机译:门控碳纳米管的场发射增强和氢再生

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We report large increases in field emission current when operating carbon nanotubes in substantial pressures of hydrogen, especially when the nanotubes were contaminated. We have previously demonstrated two different configurations of integrally gated carbon nanotube field emitter arrays (cNTFEAs), CNTs grown inside microfabricated gate apertures with and without silicon posts. Salient features of these in-situ grown microgated cNTFEAs include the absence of electrical arcing, low operating voltage, and enhancing effect of some residual ambient gases. Operating both configurations of cNTFEAs without special pre-cleaning in greater than 10~(-5) Torr hydrogen produced orders of magnitude enhancement in emission. For a cNTFEA intentionally degraded by oxygen, the operation in hydrogen resulted in a 340-fold recovery in emission. The results suggested a dependence on atomic hydrogen produced from the interaction between emission electrons and molecular hydrogen. The observed emission enhancement could be due to removal of oxygen-containing surface species, a surface dipole formation, or hydrogen doping.
机译:我们报告说,当在相当大的氢气压力下操作碳纳米管时,尤其是当纳米管被污染时,场发射电流将大大增加。我们之前已经展示了两种不同配置的整体门控碳纳米管场发射器阵列(cNTFEA),即在带有或不带有硅柱的微细栅极孔内生长的CNT。这些原位生长的微粉化cNTFEA的显着特征包括不存在电弧,低工作电压以及增强某些残留环境气体的作用。在不超过10〜(-5)Torr氢气的情况下,在没有特殊预清洁的情况下运行cNTFEAs的两种配置,都会使排放量增加几个数量级。对于有意被氧气降解的cNTFEA,在氢气中运行可导致排放恢复340倍。结果表明依赖于由发射电子和分子氢之间的相互作用产生的原子氢。观察到的发射增强可能是由于去除了含氧表面物质,表面偶极子形成或氢掺杂所致。

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