首页> 外文会议>Novel in-plane semiconductor lasers XII >Analysis of bulk and facet failures in AlGa As-based high-power diode lasers
【24h】

Analysis of bulk and facet failures in AlGa As-based high-power diode lasers

机译:基于AlGa As的高功率二极管激光器的整体和端面故障分析

获取原文
获取原文并翻译 | 示例

摘要

Mechanisms are addressed limiting the reliability high-power diode lasers. An overview is given on the kinetics of the Catastrophic Optical Damage (COD) process, which is related to highest output powers. It involves fast defect growth fed by re-absorption of laser light. Local temperatures reach the order of the melting temperature of the waveguide of the device. The process starts either at a facet or at any weak point, e.g., at extended defects in the interior of the cavity.
机译:解决了限制高功率二极管激光器可靠性的机制。概述了灾难性光学损伤(COD)过程的动力学,该过程与最高输出功率有关。它涉及通过重新吸收激光来快速生长缺陷。局部温度达到设备波导的熔化温度的数量级。该过程从刻面或任何弱点开始,例如从腔内部的扩展缺陷处开始。

著录项

  • 来源
    《Novel in-plane semiconductor lasers XII》|2013年|86401F.1-86401F.10|共10页
  • 会议地点 San Francisco CA(US)
  • 作者单位

    Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A,12489 Berlin, Germany;

    Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A,12489 Berlin, Germany;

    EMPA, Swiss Federal Laboratories for Materials Science and Technology, UEberlandstrasse 129, 8600 Duebendorf, Switzerland;

    Leibniz-Institut fuer Kristallzuechtung, Max-Born-Strasse 2, 12489 Berlin, Germany;

    Max-Born-Institut fur Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A,12489 Berlin, Germany;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    High-power diode lasers; degradation mechanisms; catastrophic optical damage;

    机译:大功率二极管激光器;退化机制;灾难性光学损伤;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号