SUPER SILICON INITIATIVE AND FUTURE LARGE WAFER SIZE DIAMETERS

摘要

The Super Silicon project for the future large silicon wafer of 400 mm diameter, namely the SSi project, started in 1996 and its R&D activities completed in 2000. Through the experiences of this project, three keys to the crystal growth technology for the future large diameter silicon wafers are introduced and discussed: the equipments for large diameter silicon crystals, the growth conditions of large-sized crystals, and the material innovation like quartz crucibles. The CZ furnaces with crystal supporting system can be applied to the future larger diameter silicon crystals. The growth and quality control of the crystals are also technologically optimistic. Infra-structure like quartz crucibles seems not to become a bottle neck until 450 mm diameter era. The feasibility study on cost issues has never been done and will be required for commercial production.