STRUCTURAL PROPERTIES OF POLY-SI THIN FILMS OBTAINED BY ALUMINUM-INDUCED CRYSTALLIZATION IN DIFFERENT ATMOSPHERES

摘要

In this work, the structural properties of poly-Si films obtained by AIC in different atmospheres - N_2, N_2+H_2 and H_2 have been studied by microprobe Raman spectroscopy, optical microscopy and XRD analysis. The XRD measurements show that the preferential crystallographic orientation of the silicon crystallites is (111). The results indicate that the structure of the poly-Si films, obtained by AIC of a-Si, is improved when the annealing is performed in an atmosphere containing H_2. More significant improvement occurs for the inter-grain material. Full crystallization of the structure glass/Al/a-Si annealed in forming gas is achieved when a two-step annealing technique is employed.