Investigation of structural properties of poly-Si thin films obtained by aluminium induced crystallization in different atmospheres

摘要

The structural properties of poly-Si films obtained by aluminium induced crystallization (AIC) in different annealing atmospheres -N_2, N_2 + H_2 and H_2 - have been studied by microprobe Raman spectroscopy, optical microscopy and X-ray diffraction spectroscopy (XKD). The Al and amorphous Si films were deposited by magnetron sputtering. The results indicate that the structure of the poly-Si films is improved when the annealing is performed in an atmosphere containing H_2. The presence of H_2 leads to better structural properties of poly-Si prepared by AIC. It is supposed that H_2 stimulates the crystalline grain growth during annealing by increasing the diffusion rates of Al and Si.