Light emission in thin films (SiO_2, siO_2:Si and Si_3N_4) on a single crystallien silicon surface has been investigated after treatment at enhanced argon pressure, HP. Pronounced effect of HP up to 1.5 GPa during annealing up to 1550 K on photoluminescence, PL. of the SiO_2, SiO_2:Si and Si_3N_4 films of 0.1-0.2 #mu#m thickness has been stated. The pressure - temperature treatment results in development and enhancement of ultraviolet and visible PL at about 290 - 320, 360, 460, 600 and 680 nm, related to stress induced creation of PL active silicon nanoclusters and other oxygen deficient defects.
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