Photoluminescence from pressure-annealed silicon dioxicde and nitride films

摘要

The effect of high temperature-high pressure (HT-HP) treatment at up to 1550 K, and 1.5 GPa on photoluminescence (excited by λ_ex=250 or 325 nm) of silicon dioxide, nitride and oxynitride films (0.1-1.03 μm thick) on single crystalline Czochralski silicon was investigated. The HT-HP treatment result sin ultraviolet/visible photoluminescence at about 290, 305, 360 and 420-550 nm, probably related to stress-induced creation of silicon nanoclusters at the thin film surface or its boundary with Si and of oxygen/nitrogen deficient defects in thin film material.