Synthesis of Lead Zirconate Antiferroelectric Thin Films By Sol-GelProcessing

摘要

A modified methoxyethanol sol-gel process was used for the production of PbZrO_3 thin films. The new route uses lead oxide [PbO] instead of lead acetate [Pb(OAc)_2]. Through the use of this method it is possible to prepare single-phase perovskite materials with improved properties. Examples are given for PbZrO_3 thin layers deposited by the spin coating process on TiO_2/Pt/TiO_2/SiO_2/Si substrates from various sols where lead acetate or lead oxide are used as the starting lead compound. The preferred orientation and the perovskite phase content of the films were studied using X-ray diffraction analysis (XRD). Scanning electron microscopy (SEM) was used for microstructural characterization of the films. Dielectric properties were measured as a function of frequency. In this study the influence of the starting lead compound on the characteristics of the sol-gel derived PZ films were investigated.