首页> 外文会议>NATO Advanced Research Workshop on Atomistic Aspects of Epitaxial Growth Jun 25-30, 2001 Dassia, Corfu, Greece >ATOMISTIC THEORY OF THE GROWTH MODE FOR A THIN METALLIC FILM ON AN ISULATING SUBSTRATE
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ATOMISTIC THEORY OF THE GROWTH MODE FOR A THIN METALLIC FILM ON AN ISULATING SUBSTRATE

机译:绝缘基板上金属薄膜生长模式的原子理论

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We have developed a novel theory for predicting the growth mode of a thin metallic film on an insulating substrate. Our theory combines ab initio electronic structure calculations for several ordered metal/insulator interfaces with varying metal coverage, with a thermodynamic method known in the theory of alloys. We illustrate this approach for an Ag film deposited on a MgO(001) substrate. Ab initio Hartree-Fock calculations predict a high mobility of adsorbed silver atoms on the perfect magnesia surface even at low temperatures. Our theoretical analysis clearly demonstrates that the growth of metal islands is predominant at the initial stage of silver deposition on MgO, which agrees with the experimental data.
机译:我们已经开发出一种新颖的理论来预测绝缘基板上金属薄膜的生长模式。我们的理论结合了具有不同金属覆盖率的几种有序金属/绝缘体界面的从头开始的电子结构计算,以及合金理论中已知的热力学方法。我们为沉积在MgO(001)衬底上的Ag膜说明了这种方法。从头算Hartree-Fock计算可预测,即使在低温下,理想氧化镁表面上吸附的银原子也具有很高的迁移率。我们的理论分析清楚地表明,在MgO上银沉积的初始阶段,金属岛的生长是主要的,这与实验数据相符。

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