Taras Shevchenko National University of Kyiv, Department of Physics, Division of Optics, 64/13 Volodymyrska Str., 01601 Kyiv, Ukraine;
Taras Shevchenko National University of Kyiv, Department of Physics, Division of Optics, 64/13 Volodymyrska Str., 01601 Kyiv, Ukraine;
Taras Shevchenko National University of Kyiv, Department of Physics, Division of Optics, 64/13 Volodymyrska Str., 01601 Kyiv, Ukraine;
Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA;
Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA;
Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA;
Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA;
solar cells; nanostructures; quantum wires; photo-voltage; intermediate band; ideality factor;
机译:具有InAs / InGaAs量子阱的变质GaAs / InAlGaAs / InGaAs异质结构的光学性质,在1.250-1400 nm光谱范围内发光
机译:强磁场中带有量子阱的InGaAs / GaAs异质结构中的DHole回旋共振
机译:Ge / InGaAs / GaAs异质结构中的应变锗薄膜:Ge / InGaAs界面处的边缘失配位错的形成
机译:具有一维纳米结构的InGaAs / GaAs异质结构的产生 - 重组过程
机译:低功率隧道场效应晶体管的混合As / Sb和拉伸应变的Ge / InGaAs异质结构
机译:在超宽窗口中与InGaAs QWS异质结构的选择性区域外延的表面纳米结构
机译:调制掺杂Inalas / InGaas / Inalas和alGaas / InGaas / alGaas异质结构中的电子传输
机译:用于InGaas热光电器件中埋入式反射器/互连应用的InGaas / Feal / Inalas / Inp异质结构的生长和性质