Characterization of Graphene Segregated on Ni

摘要

We report a surface segregation approach to synthesize high quality graphene films on Ni under ambient pressure. Graphene films were segregated from Ni surfaces by carbon dissolving at high temperature and cooling down with cooling rates ～10 ℃/s. Transmission electron microscopy and Raman spectra studies indicated that these graphene films have high quality crystalline structure and controllable thickness. Graphene films were transferred to insulating substrates by wet etching and were found to maintain their high quality. Electronic properties of the graphene layers were also explored.