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Nanostructured Antistatic and Antireflective Thin Films Made of Indium Tin Oxide and Silica Over-coat Layer

机译:氧化铟锡和二氧化硅覆盖层制成的纳米结构抗静电和抗反射薄膜

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摘要

Stable dispersion of colloidal indium tin oxide nanoparticles was prepared by using indium tin oxide nanopowder, organic solvent, and suitable dispersants through attrition process. Various comminution parameters during the attrition step were studied to optimize the process for the stable dispersion of indium tin oxide sol. The transparent and conductive films were fabricated on glass substrate using the indium tin oxide sol by spin coating process. To obtain antireflective function, partially hydrolyzed alkyl silicate was deposited as over-coat layer on the pre-fabricated indium tin oxide film by spin coating technique. This double-layered structure of the nanostructured film was characterized by measuring the surface resistance and reflectance spectrum in the visible wavelength region. The final film structure was enough to satisfy the TCO regulations for EMI shielding purposes.
机译:通过使用氧化铟锡纳米粉,有机溶剂和合适的分散剂,通过磨损过程制备了胶体氧化铟锡纳米颗粒的稳定分散体。研究了磨损步骤中的各种粉碎参数,以优化铟锡氧化物溶胶稳定分散的工艺。使用铟锡氧化物溶胶通过旋涂工艺在玻璃基板上制备透明导电膜。为了获得抗反射功能,通过旋涂技术将部分水解的硅酸烷基酯作为外涂层沉积在预制的铟锡氧化物膜上。通过测量可见波长区域中的表面电阻和反射光谱来表征纳米结构膜的这种双层结构。最终的膜结构足以满足用于EMI屏蔽目的的TCO法规。

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