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Effects of annealing on the optical and electronic properties of poly (vinylidene fluoride-trifluoroethylene) copolymer thin films

机译:退火对聚偏二氟乙烯-三氟乙烯共聚物薄膜的光学和电子性能的影响

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Thin films of vinylidene fluoride with trifluoroethylene [P(VDF-TrFE)] copolymer have been deposited onto bare Si and SiO2 by spin casting from methylethylketone solutions. The structures and optical and electronic properties for P(VDF-TrFE) films after vacuum and forming gas annealing were studied. The degree of structural order and the crystallinity determined by X-ray diffraction were increased with the thermal annealing time. Ellipsometry spectroscopy were employed to investigate the changes in the thickness, refractive indices n, and the anisotropic properties. The results reflected that the n was increased with the thermal annealing time and temperature, and the anisotropy of the annealed films was strengthened with the annealing time and temperature. Metal-polymer-(oxide)-semiconductor capacitors were used to measure the static dielectric constant K and interfacial electronic properties of P(VDF-TrFE) on Si which the K increase with film thickness and thermal annealing. The interface at Al-P(VDF-TrFE) and/or P(VDF-TrFE)-Si affect the K value which is sensitive for films thinner than 120 nm. The Si- P(VDF-TrFE) interface quality determined using capacitance-voltage and current-voltage measurementswas found to be improved after forming gas annealed.
机译:偏二氟乙烯与三氟乙烯[P(VDF-TrFE)]共聚物的薄膜已通过旋铸从甲基乙基酮溶液中沉积到裸露的Si和SiO2上。研究了P(VDF-TrFE)薄膜在真空和形成气体退火后的结构,光学和电子性质。 X射线衍射确定的结构级数和结晶度随热退火时间的增加而增加。椭偏光谱法用于研究厚度,折射率n和各向异性性质的变化。结果表明,n随热退火时间和温度的增加而增加,退火膜的各向异性随退火时间和温度的增加而增强。使用金属-聚合物-(氧化物)-半导体电容器来测量P(VDF-TrFE)在Si上的静态介电常数K和界面电子性能,随着膜厚度和热退火的增加,K会增加。 Al-P(VDF-TrFE)和/或P(VDF-TrFE)-Si处的界面会影响K值,这对厚度小于120 nm的薄膜很敏感。发现在形成气体退火后,使用电容-电压和电流-电压测量确定的Si-P(VDF-TrFE)界面质量得到改善。

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