Characterization and Growth Mechanism of B_(12)As_2 Epitaxial Layers Grown on (1-100) 15R-SiC

摘要

A systematic study of the heteroepitaxial growth of B_(12)As_2 on m-plane 15R-SiC is presented. In contrast to previous studies of B_(12)As_2 on other substrates, including (100) Si, (110) Si, (111) Si and (0001) 6H-SiC, single crystalline and untwinned B_(12)As_2 was achieved on m-plane 15R-SiC. Observations of IBA on m-plane (1100 )15R-SiC by synchrotron white beam x-ray topography (SWBXT) and high resolution transmission electron microscopy (HRTEM) confirm the good quality of the films on the 15R-SiC substrates. The growth mechanism of B_(12)As_2 on m-plane 15R-SiC is discussed. This work demonstrates that m-planel5R-SiC is potentially a good substrate choice to grow high quality B_(12)As_2 epilayers.