Low Temperature Deposition of Si-based Thin Films on Plastic Films Using Pulsed-Discharge PECVD under Near Atmospheric Pressure

摘要

Low temperature (150 ℃) deposition of doped and undoped polycrystalline Si (poly-Si) as well as SiN_x films on polyethylene terephthalate (PET) films has been achieved with practical deposition rates by using pulsed-plasma CVD under near-atmospheric pressure. The precursor is SiH_4 diluted in H_2 for poly-Si while N_2 has been additionally used for SiN_x. No inert gases such as He was used. A short-pulse based power system has been employed to maintain a stable discharge in the near-atmospheric pressures. With this technique, deposition of poly-Si thin film with virtually no incubation layer is possible, which in the case of P-doped poly-Si shows a Hall mobility (μ_H) of 1.5 cm~2/V·s.