High-mobility Organic Single-crystal Transistors with Amorphous Fluoropolymer Gate Insulators

摘要

High-mobility rubrene single-crystal field-effect transistors are built on highly water- and oil-repellent fluoropolymer gate insulators. Roughness is intentionally introduced at the surface once to provide good adhesion to metal films and photoresist polymers for stable bottom electrodes. Before constructing interfaces with rubrene crystals, smoothness of the fluoropolymer surface is recovered by annealing at a moderate temperature to maximize mobility of the carriers induced near the interfaces. The estimated mobilities in the saturation region reproducibly exceeded 15 cm~2/Vs for all the ten devices fabricated in this method and reach 30 cm~2/Vs for the best two samples among them. The results demonstrate that the water-repellency and smoothness of the dielectric polymers are favorable in the excellent transistor performance.