Spin-Dependent Variable Range Hopping Conductivity

摘要

Basing on the study of the transport in disordered carbon nanomaterials we argue that the correct description of the magnetoresistance can be obtained in a spin polarization theory, which processes separately the spin and orbital degrees of freedom in hoping conductivity in magnetic field. It is found that the polarization of the spin part of the electron wave function controls the probabilities of the hops between the single and double occupied localized states and, moreover, the spin polarization process can be treated as in the paramagnet with spin S=l/2. The experimental checking of the universal magnetoresistance scaling expected in the spin polarization model is provided.