Dry patterning of resistive masks and topological structures

摘要

Abstract: The development of dry resistive mask patterning process is the most complex point in practical application of vacuum small-operation cluster automated technologies of producing integrated circuits with submicron range size elements. The problem is successfully solved by small-operation laser vacuum projection lithography (LVPL). The equipment cluster for LVPL includes the installation for dry deposition of resist films on the substrate and the installation for its exposition-displaying. Organic materials are used as resists in such process. It was discovered that topological element formation in resist layers takes place mainly because of high speed thermal processes of resist material sublimation exposed by laser radiation surface parts.!6