Abstract: A simple flange-mounted neutral beam source is invented to produce a low energy nonthermalized fast neutral radical beam. This variable energy neutral radical beam can activate the SiO$-2$/ or Si surface for chemical reaction depending on the set incident energy and the chemical system chosen. The fast neutral radical beam energy is continuously adjustable (2 eV $LS Ek $LS 200 eV). The beam flux is typically 5 $MUL 10$+15$/ cm$+$MIN@2$/ sec$+$MIN@1$/ (approximately 4 L) and higher beam flux (e.g., approximately 50 L) can be obtained by varying the plasma and the neutralizer parameters. An uniform large diameter plasma is also made for the production of neutral beam covering 5' wafer and larger. Large diameter neutral beam single wafer reactor is feasible with off-the-shelf pumping technology.!0
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机译：摘要：发明了一种简单的法兰安装式中性束源，以产生低能量，非热态的快速中性自由基束。这种可变能量的中性自由基束可以激活SiO $ -2 $ /或Si表面以进行化学反应，具体取决于设定的入射能量和所选的化学体系。快速中性自由基光束能量是连续可调的（2 eV $ LS Ek $ LS 200 eV）。光束通量通常为5 $ MUL 10 $ + 15 $ / cm $ + $ MIN @ 2 $ / sec $ + $ MIN @ 1 $ /（大约4 L），更高的光束通量（例如大约50 L）通过改变等离子体和中和器参数获得。还制造出均匀的大直径等离子体，用于生产覆盖5'及更大尺寸晶片的中性束。大直径中性束单晶片反应器可通过现成的泵送技术实现！0
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