DC-2 GHz low loss cryogenic InAs/AlSb HEMT switch

摘要

A DC-2 GHz InAs/AlSb HEMT MMIC single pole double throw (SPDT) switch designed for cryogenic temperature has been fabricated and characterized. This switch is suitable for low RF power applications that require low insertion loss and high isolation. At 2 GHz, the SPDT switch demonstrated a typical low insertion loss of 0.7 dB at 300 K and 0.3 dB at 90 K. The isolation is greater than 40 dB for both temperatures. These results demonstrate the outstanding potential of ABCS HEMT technology for low loss SPDT switches for cryogenic temperature.