Analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET

摘要

In this paper, detailed analysis of Fin width and temperature dependence of flicker noise for bulk-FinFET are described. The FinFET with narrow fin width such as below 30 nm is attractive for scaled CMOS because of double gate structure. Additionally, the flicker noise of FinFET decreases and the temperature dependence of the noise become smaller as the fin width becomes narrower. According to our measurements and simulation analysis, these are because the vertical electrical field from channel to gate electrode has relaxed with narrowing of fin width. The FinFET with narrow fin width is attractive for not only digital but also RF / analog circuits design because of good cut-off characteristics and lower flicker noise.